| PART |
Description |
Maker |
| QRC330002 QRD330002 QR3310002 QR3310001 QRC330001 |
Fast Recovery Diode Module (100 Amp/3300 Volts) 100 A, 3300 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| SI2304DDS SI2304DDS-T1-GE3 |
N-Channel 30-V (D-S) MOSFET
3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
Vishay Siliconix
|
| CM1500HC-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
1500 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| UHD0J332MHD NICHICONCORPORATION-UHD1E561MHD |
4 Channel, 100 ohms, 8.5 pF CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 3300 uF, THROUGH HOLE MOUNT
|
Nichicon, Corp.
|
| PM1200HCE330-1 |
1200 A, 3300 V, N-CHANNEL IGBT
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information 800 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| SM3338-43 |
3300-3800 MHz 20 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| PM1200HCE330- PM1200HCE330-1 PM1200HCE330 |
-High Voltage Intelligent Power Module (1200 Amperes/3300 Volts)
|
Powerex Power Semiconductors
|
| R73QI13304030J |
Capacitor, film, 3300 pF, /-5% Tol, -55/ 105C, General Purpose, 1000 VDC@85C, Lead Spacing=15 mm
|
Kemet Corporation
|
| C0402C332K3RACTU |
Capacitor, Ceramic, SMD, MLCC, Temperature Stable, Class II, 3300 pF, /-10% Tol, 25 V, X7R, 0402 (1005 metric)
|
Kemet Corporation
|
| QR3310001 |
Fast Recovery Diode Module (100 Amp/3300 Volts) 快速恢复二极管模块00 Amp/3300伏特
|
Powerex, Inc.
|
| ALS30A332NP450 |
Aluminum Electrolytic, 85C, ALS30, 3300 uF, 20%, 450 V, -40/ 85C
|
Kemet Corporation
|
|
